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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB856 DESCRIPTION *Collector Current: IC= -3A *Low Collector Saturation Voltage : VCE(sat)= -1.2V(Max)@IC= -2A *High Collector Power Dissipation APPLICATIONS *Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE -50 -50 -4 -3 25 UNIT .cn mi e V V V A IC Collector Current-Continuous Total Power Dissipation @ TC=25 PC W TJ Junction Temperature 150 Tstg Storage Temperature Range -45~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS IC= -50mA ; RBE= MIN TYP. 2SB856 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage -50 V V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA ; IE= 0 -50 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -4 V VCE(sat) VBE(on) ICBO Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A B -1.2 V Base-Emitter On Voltage IC= -1A; VCE= -4V -1.5 V A Collector Cutoff Current VCB= -20V; IE= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain fT Current-Gain--Bandwidth Product hFE-1 Classifications A 35-70 B 60-120 w C ww scs .i IC= -1A; VCE= -4V IC= -0.1A; VCE= -4V IC= -0.5A; VCE= -4V .cn mi e 35 35 -100 200 35 MHz 100-200 isc Websitewww.iscsemi.cn 2 |
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